Tuesday, 24 May 2005

This presentation is part of: NanoScience and Technology Posters

Probing the Intrinsic Electrical Properties of Individual Nanowires With Electric Force Microscopy

Jianming Zhang, Oleh Taratula, Jowairia Chaudhry, and Huixin He. Rutgers University, Newark Campus, Newark, NJ

One-dimensional nano-structures are attractive building blocks for the next generation nano-electronics. Although significant progresses have been made in nanowire fabrication, challenges still exist to fully exploit their potential applications for the future nano-devices. One of the challenges is to study the intrinsic electronic properties of individual nanowires without average effect, because it is always difficult to separate the contributions in the measured resistance from the nanowire itself and from the wire/metal electrode contact. Methods based on scanning probe microscopic techniques have been developed and widely used, such as, conducting atomic force microscope (AFM), electrical force microscope (EFM) and scanned gate microscope, etc. Advantages and disadvantages exist in each of the methods. We studied the electrical properties of Pd nanowires with conductive AFM and EFM. In the EFM studies, we surprisingly found that Pd nanowires showed a negative-positive-negative phase shift. In this report, we will present the electrical properties of individual Pd nanowires studied by these two techniques. To understand the new phenomenon that occurred in the EFM studies, comparison was made with different one-dimensional nanostructures, such as carbon nanotubes, CdS nanowires and DNA.

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