A novel near-room temperature chemical vapor deposition (CVD) process was developed to produce tungsten and aluminum thin films by reacting gaseous hydrogen atoms (H-atoms) with various metal precursors. Silvery-gray metallic deposits were produced and their chemical, physical, and electrical properties were charaterized and compared to the conventional high temperature CVD techniques. Oxide films of tungsten and aluminum were also deposited on surfaces using H-atom reactions with molecular oxygen or oxygen atom reactions. Their properties were ascertained as well. The novel CVD technique employed here has advantages to the conventional high-temperature CVD techniques as utilized in the microelectronics community. They are: 1.) Low growth temperature produces high quality films. 2.) Deposition takes place in a plasma-free environment. 3.) Films from this process are adherent to all surfaces, including polymers.
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Back to The 33rd Northeast Regional Meeting (July 14-17, 2005)