The growth of smooth, homo- and heteroepitaxial metal layers has always been a major goal of electrodeposition. Such layers are considered superior to any other kind of thin films as they strictly reproduce the crystallography and (in general) the morphology of the substrate surface underneath. Our effort is to grow epitaxial Cu thin film on Au(111) with considerable thickness by multiple redox replacement of underpotentially deposited Pb used as a sacrificial metal. Open circuit potential monitoring during the replacement reaction is used to control the completion of each deposition event. Anodic film stripping is performed to determine the film thickness and calculate the yield of the employed deposition strategy. Cyclic Voltammetry (CV) and high resolution in-situ Scanning Tunneling Microscopy (STM) are employed to carry out and monitor the two-dimensional growth of up to 156 monolayers (ML) of Cu on Au(111). A set of CV and concomitant STM results, after growth of 15, 56, 113 and 156ML of Cu on Au(111) reveal an excellent film quality and uniform surface morphology maintained during the entire growth process. Atomic scale STM results ascertain the topmost layer crystallographic orientation of the accordingly grown copper films. X-ray Photoelectron Spectroscopy is used for compositional monitoring. A detailed experimental description and critical discussion of the results will be preceded by a relevant theoretical argumentation.