Organic field effect transistors can be challenging to characterize. Large channel access resistance and trap-limited conduction mechansisms make traditional measurement techniques challenging to use. A major obstacle is the traditional dependence of OFET models on band transport-based transistor models to determine effective mobility, apparent threshold voltage, and contact resistance.

This presentation will discuss a multifaceted characterization strategy which is able to characterize and model the contact resistance, flatband voltage, and effective mobility of the device in the linear region without using a band-like transport model for the transistor. The model will be presented and applied to a number of challenging characterization problems including evalation of a process that adjusts the threshold voltage of an OFET using treatment of the gate dielectric.