A new class of oxide thin film has been developed on the basis of low-temperature deposition and processing of aqueous precursors. The films exhibit exceptional performance as insulators (breakdown > 5 MV/cm, leakage < 10 nA/cm2 @ 1 MV/cm) in metal-insulator-metal capacitors and as gate dielectrics in thin-film transistors. The high quality and uniformity of the films have permitted the fabrication of new nanolaminated structures by using a simple spin-coating process. Imaging and X-ray reflectivity have revealed that layers as thin as 5 nm can reproducibly be stacked.