Copper indium disulfide is a promising semiconductor material for solar applications. Thin films containing copper, indium, and sulfur were made by casting metal-organic compounds containing copper, indium and sulfur, (single source precursors), onto glass and silicon substrates and then initiating decomposition of the precursor material in vacuum with a radiofrequency plasma. Several single source precursors were used including (Ph₃P)₂Cu(SEt)₂In(SEt)₂, a solid, and (isobutyl₃ P)₂Cu(S propyl)₂In(S propyl)₂, a liquid. The decomposition process initiated by the plasma was monitored using mass spectrometry. Resulting films were analyzed with EDS for atomic composition, XRD for crystallinity, and SEM for surface morphology. Casting methods, plasma conditions and film characteristics will be discussed. The cast films will be compared with films made by spray injection plasma enhanced vapor deposition.