Many industries use electron-beam lithography pattern writing process to produce acid and base resistant stencils. A negative resist pattern or exposed pattern that is insoluble in solvents is desired because of a wider processing latitude and high resolution. This same process was applied to perfluorocyclobutyl (PFCB) aryl ether polymers and fluorinated aromatic vinylene ether (FAVE) polymers which possess internal fluorolefins capable of thermal crosslinking. Fluorinated polymers compared to non-fluorinated polymers are more transparent which is advantageous for using e-beam lithography. Poly(methylmethacrylate) (PMMA) is a popular positive resist material commonly used in e-beam lithography. PMMA was used as the resist to determine whether the aforementioned fluoropolymers behave as a positive or negative resist.