Interfacial electron transfer (ET) dynamics from Xanthene dyes (Rhodamine B and Fluorescein 548) to three semiconductors (In2O3, SnO2, ZnO) were investigated using both ultrafast IR and visible transient absorption spectroscopy. The direct detection of electrons in the semiconductor films with ultrafast IR spectroscopy after excitation of the sensitizers showed that the dyes on In2O3 and SnO2 have similar injection rates one order of magnitude faster than those on ZnO film. The IR injection dynamics to the different semiconductors were directly correlated with visible absorption dynamics of the sensitizer cation and the excited state quenching due to injection. We also compared these results to other dye-sensitizer systems that have already been extensively investigated. Similarities in injection dynamics between these In2O3 and SnO2 systems will be discussed, as well as a potential model for the observed results.