278 Hydrogen Generation and Photoelectrochemical Effect of p-I nxGa1-X N (0 ≤x≤ 0.22) Alloys

Thursday, November 5, 2009: 12:00 PM
Brahma (Camino Real Hotel)
Krishna P. Aryal , Electrical and Computer Engineering, Texas Tech University, Lubbock, TX
Bed N. Pantha , Electrical and Computer Engineering, Texas Tech University, Lubbock, TX
Jing Li , Electrical and Computer Engineering, Texas Tech University, Lubbock, TX
Jingyu Lin , Electrical and Computer Engineering, Texas Tech University, Lubbock, TX
Hongxing Jiang , Electrical and Computer Engineering, Texas Tech University, Lubbock, TX
Generation of hydrogen gas, a clean source of energy with the highest conversion efficiency, via splitting water using renewable resources has attracted tremendous research work in recent years. For producing hydrogen gas, a promising method using semiconductor materials is direct photoelectrolysis by solar energy. InxGa1-xN is a very promising candidate for water splitting because of its direct band gap which can be tuned to the entire solar spectrum through band gap engineering. For photoelectrolysis, p-type conductivity is preferred because it provides some cathodic protection against oxidation of the electrode material. Therefore, p-InxGa1-xN represents new opportunities for water splitting and hydrogen generation due to its tunable band gap and its stable properties in the electrolytic solution. Photoelectrochemical effects of a p-type InxGa1-xN (0 ≤ x ≤ 0.22) grown by metal organic chemical vapor deposition (MOCVD) will be presented. Photo-generated current in p- InxGa1-xN alloys is found to be much higher than that in p-GaN. Time dependent photocurrent density characteristics show that the stability of electrodes in aqueous solution of HBr (1 mol/L) is excellent. Photocurrent density is found to have a linear relation with the hole mobility of semiconducting electrodes and excitation intensity of the light source.